onsemi to Develop Next-Generation GaN Power Devices with GlobalFoundries
Summary:
onsemi expands its leadership in intelligent power through a new collaboration agreement with
News Highlights:
- onsemi collaborates with
GlobalFoundries to develop state-of-the-art 200mm eMode lateral GaN-on-Silicon process technology for critical markets, starting with 650V. - onsemi’s GaN portfolio is ideally suited for high-density systems where power demands continue to rise but physical size cannot, including AI data centers, electric vehicles, renewable energy, and aerospace, defense, and security systems.
- Applications include power supplies, DC-DC converters, onboard chargers, solar microinverters, energy storage systems, and motor drives across a range of high-growth markets.
“This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650V power devices for high-growth markets. Paired with our silicon drivers and controllers, these GaN products will enable customers to innovate and build smaller, more efficient power systems for AI data centers, EVs, space applications, and beyond. We are on track to begin providing samples to customers in the first half of 2026, and scale rapidly to volume production.” –
“By combining our 200mm GaN-on-Si platform and
onsemi will pair its industry-leading silicon drivers, controllers, and thermally enhanced packages with GF’s 650V GaN technology platform to deliver optimized GaN devices with higher power density and efficiency. These include power supplies and DC-DC converters for AI data centers, onboard chargers and DC-DC converters for electric vehicles, solar microinverters and energy storage systems, motor drives and DC-DC converters, for industrial and aerospace, defense, and security applications.
This effort expands onsemi’s leading power semiconductor portfolio, which now includes the full spectrum of GaN technologies – from low, medium and high voltage lateral GaN to ultra high-voltage vertical GaN – enabling system designers to build next-generation power architectures that deliver more power in smaller footprints. These GaN advantages include:
- Higher Frequency Operation – By operating at higher switching frequencies, GaN allows designers to reduce component count, system size, and cost while improving efficiency and thermal performance.
- Bidirectional Capability – Bidirectional GaN capabilities enable entirely new topologies that can replace up to four traditional unidirectional transistors, cutting costs and simplifying designs.
- Integrated Functionality – Combining GaN FETs with drivers, controllers, isolation, and protection in a single package allows for faster design cycles and lower electromagnetic interference. The thermally enhanced packages and optimized gate drivers push performance and reliability even at high switching speeds.
Timing and Availability
onsemi will begin sampling in the first half of 2026.
About onsemi
onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. onsemi offers a highly differentiated and innovative product portfolio, delivering intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way to creating a safer, cleaner and smarter world. onsemi is included in the Nasdaq-100 Index® and S&P 500® index. Learn more about onsemi at www.onsemi.com.
onsemi and the onsemi logo are trademarks of
About GF
Contact:
onsemi
michael.mullaney@onsemi.com
stephanie.gonzalez@gf.com
